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Process Chamber
- Full access to front and rear chamber-
Variable source-to-substrate distance-
Variable port locations, observation port(s)- Process chamber
32" X 32"
(16.151 ft3)- System footprint -70"W x 43"D x 80.5"H
(does not
include compressor or mechanical pump footprint).
Process Stations
- Substrate heating, 400＜C, 4-8-16
KW- Selectable ramp rate, temp,
process configurable- Electron beam 1 - 6 pocket, selectable-
Ion beam
preclean/etch
Power Supply options
- Electron beam, 10-15 KW Solid state,
air cooled- Fast arc suppression
technology
Rotational
drive
- Adjustable ramp and speed, process
configurable- Ferrofluidic feedthru-
Adjustable height and angle
Deposition
Fixturing
- Rotating domes- Liftoff dome, optional
Pumping configuration
- Soft rough- Cryo pump - Cryo regeneration
function - 16" vertical gate
valve- Cryo baffle 32K L/Sec. in the process chamber opt.
Computer control, Windows xp platform
- Host Computer Interface Unit (HCIU)
- Multitasking Windows application software
- Barcode for lot entry and recipe download
- Recipe management
- Real-time process data logging
- Real-time process information
- Interactive configurable real-time graph
- SECS - GEM HSMS compliant
- Seamless integration with production server
- Configurable for all process steps
- Reports print out in MS Excel format
- Chamber leak rate test- ELO 15" LCD Touchmonitor
Ultimate vacuum
- System 10 -9 Torr- Chamber 10 -8 Torr
Utilities
- Water supply, 3-5 GPM- Air supply, 85-125 psig- 208 VAC,
3?, 5 wire, 175 Amps
Applications
- Amplifiers
- Capacitors/Filters
- HPBT/HBT
- LED's/LASERS/Diode LASERS
- OLED's
- Ophthalmic/Optics
- Power Devices
- Processors
- R&D
- RF Microwave Diodes
- SAW
- Semiconductors
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